References with cubic in the title or abstract

• Raman spectra of AlN, cubic BN and BP
• Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy
• Growth of cubic phase gallium nitride by modified molecular-beam epitaxy Growth of cubic phase gallium nitride
• Cubic phase gallium nitride by chemical vapor deposition
• An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Properties of cubic GaN grown on GaAs
• Photoluminescence of zinc-blende GaN under hydrostatic pressure
• New Epitaxial Growth Method of Cubic GaN on (100)GaAs Using (ch3)(3)ga, HCl and Nh3
• Epitaxial Growth of Cubic AlN Films on (100)silicon and (111)silicon by Pulsed Laser Ablation
• Topochemical Control in the Solid State Conversion of Cyclotrigallazane into Nanocrystalline Gallium Nitride
• Deposition of III-N Thin Films by Molecular Beam Epitaxy
• Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN
• Formation of Cubic GaN on (111)b GaAs by Metal Organic Vapor- phase Epitaxy with Dimethylhydrazine
• Electronic structure of GaN with strain and phonon distortions
• Explicit treatment of the gallium 3d electrons in GaN using the plane-wave pseudopotential method
• Effect of Stoichiometry on the Phases Present in Boron Nitride Thin Films
• Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
• Electronic Structure of Cubic GaN with Self Energy Corrections
• Electronic and structural properties of GaN by the full- potential linear muffin-tin orbitals method: The role of the d electrons
• Quasiparticle band structure of AlN and GaN
• Molecular-beam-epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source
• Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
• Transmission electron microscope observation of cubic GaN grown by metalorganic vapor phase epitaxy with dimethylhydrazine on (001) GaAs
• Metalorganic Molecular Beam Epitaxy of Cubic GaN on (100)GaAs Substrates Using Triethylgallium and Monomethylhydrazine
• Confined Acoustic and Propagating Optical Phonons in GaN/Ga1-Xalxn Superlattices
• Phase Controlled Metal Organic Chemical Vapor Deposition Epitaxial Growth of GaN on GaAs(100) Using Nh3
• GaN Based Iii-v Nitrides by Molecular Beam Epitaxy
• Epitaxial Growth and Structural, Optical Properties of Cubic GaN on (100) and (111) GaAs Grown by Metalorganic Chemical Vapor Deposition
• Surface Orientation Dependence of Growth Rate of Cubic GaN
• Electrical and structural properties of In_xGa_1-xN on GaAs
• Deposition of high quality wurtzite GaN films over cubic (111) MgAl₂O₄ substrates using low pressure metalorganic chemical vapor deposition
• Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs
• Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN
• Optical properties near the band gap on hexagonal and cubic GaN
• Epitaxial Growth of Cubic and Hexagonal GaN by Gas Source Molecular Beam Epitaxy Using a Microwave Plasma Nitrogen Source
• Epitaxial Growth of GaAs and GaN by Gas Source Molecular Beam Epitaxy using Organic Group V Compounds
• Hetero-Epitaxial Growth of Cubic GaN on GaAs by Gas-Source Molecular Beam Epitaxy
• Solid-state ``magic-angle'' sample-spinning nuclear magnetic resonance spectroscopic study of group III-V (13-15) semiconductors Nuclear magnetic resonance of semiconductors
• First-principles calculations of effective-mass parameters of AlN and GaN
• Effect of Biaxial Strain on Cubic and Hexagonal GaN Analyzed by Tight-Binding Method
• Initial stage of cubic GaN film growth on (001) GaAs by MOMBE using MMHy and TEG.
• Lattice parameters of gallium nitride
• Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN
• Investigation of GaN deposition on Si, Al₂O₃, and GaAs using in situ mass spectroscopy of recoiled ions and reflection high-energy electron diffraction Investigation of GaN deposition
• Electronic structure of cubic gallium nitride films grown on GaAs Electronic structure of c-GaN films
• Optical gain of InGaP and cubic GaN quantum-well lasers with very strong spin- orbit coupling
• Comparative Raman studies of cubic and hexagonal GaN epitaxial layers
• Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence
• Synthesis and characterization of high purity, single phase GaN powder
• Picosecond dynamics of excitons in cubic GaN
• Synthesis of GaN by N ion implantation in GaAs (001)
• Molecular beam epitaxy of cubic GaN on a (001) GaAs substrate using hydrazine
• Optical and electronic-structure study of cubic and hexagonal GaN thin films
• Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy
• Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy
• Plasma-assisted low-pressure metalorganic chemical vapor deposition of GaN on GaAs substrates
• Band gap of GaN films grown by molecular-beam epitaxy on GaAs and GaP substrates
• Thermal and plasma-assisted nitridation of GaAs(100) using NH₃
• Growth of In_xGa_1-xN and In_xAl_{1- x}N on GaAs metalorganic molecular beam epitaxy Growth of In_xGa_{1- x}N on GaAs by MOMBE
• Electron Hall mobility of n-GaN
• Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs
• Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates
• Structural characterization of GaN and GaAs_xN_1-x grown by electron cyclotron resonance-metalorganic molecular beam epitaxy Structural characterization of GaN and GaAs@/I[sub x]N@/I_1-x
• p-type zinc-blende GaN on GaAs substrates
• Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on beta -SiC
• Electronic properties under pressure of the cubic binary Ga compounds
• Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescence
• Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions
• Epitaxial growth of cubic GaN and AlN on Si(001)
• High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant
• Structural properties of cubic GaN epitaxial layers grown on beta-SiC
• Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates
• Real-Time Monitoring of the Surface Stoichiometry During Molecular Beam Epitaxy of Cubic GaN on (001)GaAs by RHEED
• Microstructure, electrical properties, and thermal stability of Al ohmic contacts to n- GaN
• Epitaxial growth and optical transitions of cubic GaN films
• Surface kinetics of zinc-blende (001) GaN
• Large atomic displacements associated with the nitrogen antisite in GaN
• Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
• Quantitative determination of hexagonal minority phase content in cubic GaN using Raman spectroscopy
• Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate
• Stabilization of Cubic AlN in Epitaxial AlN/TiN Superlattices
• Exciton spectra and spin-orbit splitting in GaN epitaxial films
• Mg-doped green light emitting diodes over cubic (111) MgAl2O3 substrates
• The near band edge photoluminescence of cubic GaN epilayers
• Direct observation of the inital nucleation and epitaxial growth of metastable cubic GaN on (001) GaAs
• Arsenic mediated reconstructions on cubic (001) GaN
• Gallium Imide, {Ga(NH)3/2}n, a New Polymeric Precursor for Gallium Nitride Powders
• Metalorganic vapor-phase epitaxy of cubic Al(x)Ga(1-x)N alloy on a GaAs (100) substrate
• Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy
• Influence of moisture and oxygen on the formation of cubic phase GaN in halide vapor phase epitaxial growth
• Thresholds for the phase formation of cubic boron nitride thin films
• Zone-boundary phonons in hexagonal and cubic GaN
• Epitaxial Growth of Cubic GaN on (111) GaAs by Metalorganic Chemical Vapor Deposition
• Cubic Dominant GaN Growth on (001) GaAs Substrates by Hydride Vapor Phase
• Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
• On the Theory of Optical Gain of Strained-Layer Hexagonal and Cubic GaN Quantum-Well Lasers
• Native defects and impurities in cubic and wurtzite GaN
• Internal strain energy of AxB1-xN ternary solid solutions of cubic modification
• Growth and characterization of cubic GaN
• Bandgap energy of cubic GaN
• Theoretical analisis of cubic GaInN/GaN/AlGaN quantum well lasers
• Ladder structure of [(tBuNH₂)₂TaN]₅NH₃, 2C₇H₈ and its relationship to cubic TaN
• Comparative study of hexagonal and cubic GaN growth by RF-MBE
• Interfacial reactions between nickel thin films and GaN
• Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects
• An Alternative Synthesis of Cyclotrigallazane, [H2GaNH2]3 - a Precursor to Nanocrystalline, Phase-Inhomogeneous Gallium Nitride, GaN
• New Precursor Routes to Nanocrystalline Cubic/Hexagonal Gallium Nitride, GaN
• Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
• Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE
• Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation
• Raman Scattering by Surface Polaritons in Cubic GaN Epitaxial Layers
• Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor- Phase Epitaxy
• Pyrolytic Preparation of Gallium Nitride From [Ga(NEt₂)₃]₂ and Its Ammonolysis Compound
• Growth of Bulk, Polycrystalline Gallium and Indium Nitride at Subatmospheric Pressures
• High-Pressure Raman Scattering of Biaxially Strained GaN on GaAs
• Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum-Well Structures
• Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al/sub 2/O/sub 3/
• Electronic band structures and effective-mass parameters of wurtzite GaN and InN
• Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
• MBE Growth of Cubic GaN on GaAs Substrates
• Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy
• Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
• Polarization and band offsets of stacking faults in AlN and GaN
• Cubic InN inclusions: proposed explanation for the small pressure-shift anomaly of the luminescence in InGaN-based quantum wells
• Epitaxial growth and optical transition of cubic GaN films
• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
• Native defects and carbon impurity in cubic BN
• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
• Silicon on cubic zirconia
• A comparative study of GaN epitaxy on Si(001) and Si(111) substrates
• Mechanisms of Optical Gain in Cubic GaN and InGaN
• GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry
• Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs
• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
• Cubic InGaN Grown by MOCVD
• Cubic GaN Heteroepitaxy on Thin-SiC Covered Si(001)
• Crystal Structure and Defects in Nitrogen-Deficient GaN
• Cathodoluminescence of homogeneous cubic GaN/GaAs (001) layers
• Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate
• Properties, processing and applications of GaN and related semiconductors
• Infrared absorption at longitudinal optic frequency in cubic crystal films
• New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type A^IIIB^V on sapphire substrates
• Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources
• Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature
• Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition
• TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
• Structural Evolution of GaN During Initial Stage MOCVD Growth
• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
• Structural and Electronic Properties of Line Defects in GaN
• Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
• Analysis of the red optical emission in cubic GaN grown by molecular-beam epitaxy
• MOCVD Growth of Cubic GaN on 3C-SiC Deposited on Si(100) Substrates
• MOCVD Growth of Cubic GaN: Materials and Devices
• Influence of Si Doping on Optical Properties of Cubic GaN Grown on GaAs (001) Substrates by Metalorganic Vapor Phase Epitaxy
• Cubic AlGaN/GaN and GaN/InGaN Heterostructures:Effects of p-type Doping
• Strain Relaxation Mechanisms in Hexagonal and Cubic Nitride Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
• Vapor Phase Epitaxy of Cubic Gallium Nitride Using a Single Source
• Effect of an Intermediate Layer on Cubic GaN Grown on GaAs (100): Substrate Protection and Strain Relaxation
• Detection and Analysis of Hexagonal Phase Generation in Selective-Area Growth of Cubic GaN by Metalorganic Vapor Phase Epitaxy
• Growth and Characterization of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC by RF-MBE
• An Indium Surfactant Effect in Cubic GaN RF-MBE Growth
• Overdamped Electron Plasma Oscillations in Cubic AlxGa1-xN Layers Observed by Raman Scattering Spectroscopy
• Mg-Induced Kinetical Changes in the Growth of Cubic and Hexagonal GaN by Molecular Beam Epitaxy

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