References with contact in the title or abstract

• Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition
• Dry Etching and Implantation Characteristics of Iii-n Alloys
• Doping of GaAs Using SF6 Plasma Treatment
• SiC-a(3)n Alloys and Wide Band Gap Nitrides Grown on SiC Substrates
• Metal contacts to gallium nitride
• High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
• Ion-implanted GaN junction field effect transistor
• A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
• Properties of Group III Nitrides
• Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
• Thermal stability of W ohmic contacts to n-type GaN
• Low Resistance Ohmic Contact to GaN with a Separate Layer Method
• Ohmic Contact Formation to Doped GaN
• Improved Uniformity of Ti/Al Ohmic Contacts to n-GaN Grown by MOCVD
• Ohmic Contacts to 6H-SiC based on TiC and Ni
• High-temperature ohmic contact to n-type 6H-SiC using nickel
• Low resistance ohmic contacts on wide band-gap GaN
• Nonalloyed ohmic contacts on GaN using InN/GaN short- period superlattices
• Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor deposition
• Deep level defects in n-type GaN
• Ti/Ni Ohmic Contacts to n-type Gallium Nitride
• Schottky contact and the thermal stability of Ni on n-type GaN
• Metal semiconductor field effect transistor based on single crystal GaN
• Monolithic Array of LEDs for the Generation of Light at Multiple Wavelengths and its use for Multicolor Display Applications
• Obtaining the Specific Contact Resistance from Transmission Line Model Measurements
• Growth and properties of scandium epitaxial films on GaN
• Hall measurements and contact resistance in doped GaN/AlGaN heterostructures
• Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics
• Very low resistance multilayer Ohmic contact to n- GaN
• Nonlinear electroreflectance from gallium nitride using optical second-harmonic generation
• Study of Schottky barriers on n-type GaN grown by low- pressure metalorganic chemical vapor deposition
• Schottky-based band lineups for refractory semiconductors
• Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors
• Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy
• Study of Schottky contacts on n-Ga_0.51In_0.49P by low-pressure metal-organic chemical-vapor deposition
• Fabrication of GaN mesa structures
• Estimated Phase Equilibria in the Transition Metal-Ga-N Systems:Consequences for Electrical Contacts to GaN
• Specific contact resistance using a circular transmission line model
• Ohmic Contacts to n-Type GaN Using Pd/Al Metallization
• Microstructure of Ti/Al and Ti/Al/Ni/Au contacts for n-GaN
• Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization anneal
• Cleaning of GaN Surfaces
• Schottky barrier properties of various metals on n-type GaN
• Microstructure, electrical properties, and thermal stability of Al ohmic contacts to n- GaN
• Metal-Semiconductor Contacts
• Barrier Heights of 3C- and 6H-SiC Schottky Contacts: Explanation by the MIGS-and-Electronegativity Model
• Note On The Contact Between A Metal And An Insulator Or Semiconductor
• Surface States and Rectification at a Metal-Semiconductor Contact
• Role of Virtual Gap States and Defects in Metal-Semiconductor Contacts
• Lead Contacts on Si(111):H-1x1 surfaces
• Silver Schottky contacts on Si(111):H-1x1 surfaces prepared bywet-chemical etching
• Chemical trends of barrier heights in metal-semiconductor contacts:on the theory of the slope parameter
• Metal Contacts on α-GaN
• Thermal stability of W, WSi_x , and Ti/Al ohmic contacts to InGaN, InN, and InAlN
• Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts
• Microstructural stability of ohmic contacts to In_xGa_1-xN
• High temperature characteristics of Pd Schottky contacts on n-type GaN
• Ultra-low resistive ohmic contacts on n-GaN using Si-implantation
• Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN
• Ohmic contacts to n-GaN using PtIn2
• Thermally stable PtSi Schottky contact on n-GaN
• 0.12-um gate III-V Nitride HFET's with high contact resistance
• InN-based Ohmic contacts to InAlN
• Low Resistance Bilayer Nd/Al Ohmic Contacts on n-Type GaN
• Investigation of Au Schottky contacts on GaN grown by molecular beam epitaxy
• High Frequency AlGaN/GaN MODFET's
• XPS study of Au/GaN and Pt/GaN contacts
• GaN based LED's with different recombination zones
• Degradation of blue AlGaN/InGaN/GaN LEDs subjected to high current pulses
• Effect of Dry Etching on Surface Properties of III-Nitrides
• Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy
• Growth of Ternary Silicon Carbon Nitride as a New Wide Bandgap Material
• Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In Situ Cathodoluminescence
• In_xGa_(1-x)N Alloys as Electronic Materials
• Substrate Effects on the Growth of InN
• Processing Challenges for GaN-Based Photonic and Electronic Devices
• Plasma Damage Effects in InAlN Field-Effect Transistors
• Current Transport in W and WSi_x Ohmic Contacts to InGaN and InN
• Temperature Behavior of Pt/Au Ohmic Contacts to p-GaN
• Low Resistance Contacts to p-Type GaN
• Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride
• Morphology of nickel and nickel/gold contacts to gallium nitride
• Condensed Phase Equilibria in the Mo-Ga-N System at 800°C
• Ohmic Contact to P-Type GaN
• Metal contacts to n-type GaN
• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers
• Thermally stable rhenium Schottky contacts to n-GaN
• Lateral Electron Current Operation of Vertical Cavity Surface Emitting Lasers with Buried Tunnel Contact Hole Sources
• Ohmic Contacts to n- and p-GaN
• Titanium and titanium nitride contacts to n-type gallium nitride
• Ohmic Contacts Formed by Electrodeposition and Physical Vapor Deposition on p-GaN
• Pyroelectric and Piezoelectric Properties of GaN-Based Materials
• Etch Processing of III-V Nitrides
• Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium-Doped GaN
• Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs
• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
• Temperature Effect on the Quality of AlN Thin Films
• Defect States in SiC/GaN -and SiC/GaN /AlGaN- Heterostructures Characterized by Admittance and Photocurrent Spectroscopy
• DLTS Characterization of Defects Introduced During Sputter Deposition of Au Schottky Contacts on n-GaN
• Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN
• Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
• NiIn As An Ohomic Contact To p-GaN
• Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior
• Contact Issues for GaN Technology
• Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si
• Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor
• Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the "advancing" Al/Ti metallization
• Properties, processing and applications of GaN and related semiconductors
• Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates
• Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
• Influence of pre-etching on specific contact parameters for metal-GaN contacts
• EFFECTS OF INDUCTIVELY COUPLED PLASMA CONDITIONS ON THE ETCH PROPERTIES OF GaN AND OHMIC CONTACT FORMATIONS
• Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN
• High-Temperature Reliability of GaN Electronic Devices
• Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/A1xGA1-xN Superlattices
• High-Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-step Surface Treatment
• Zirconium Mediated Hydrogen Outdiffusion from p-GaN
• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
• Photoluminescence Characterization of Mg Implanted GaN
• Processing And Device Performance Of GaN Power Rectifiers
• The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride
• Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment
• A Thermodynamic Approach to Ohmic Contact Formation to p-GaN
• Metal/GaN Contacts Studied by Electron Spectroscopies
• UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
• MICROSTRUCTURE AND THERMAL STABILITY OF TRANSITION METAL NITRIDES AND BORIDES ON GaN
• Approaches to designing thermally stable Scottky contacts to n-GaN
• Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers
• Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing
• A review of the metal-GaN contact technology
• Effect of Au overlayer on Ni contacts to p-type GaN
• High-temperature structural behavior of Ni/Au Contact on GaN(0001)
• Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
• Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy
• The Effects of Reactive Ion Etching-Induced Damage on the Characteristics of Ohmic Contacts to n-Type GaN
• Room Temperature Ohmic contact on n-type GaN using plasma treatment
• Epitaxial Lateral Overgrowth of GaN using Tungsten Nitride (WNx) Mask via MOVPE and Electrical Properties of WNx/GaN Contacts
• Nonuniform Contact Potential Profile of AlGaN/GaN on SiC Measured by Kelvin Probe Force Microscopy
• Ti-Based Ohmic Contacts to p-type GaN/AlxGa1-xN Superlattices
• Transparent Low Resistance Ohmic Contact to p-type GaN and its Application to GaN Based Light Emitting Diodes
• Low p-Type Contact Resistance Using Mg-Doped InGaN and InGaN/GaN Superlattices
• Formation of Low-Resistance, Thermally Stable, and Highly Transparent Pt-Based Ohmic Contacts to Surface-Treated p-GaN
• The Role of Annealing Ambient on the Formation of Ni/Au Ohmic Contacts to GaN LEDs
• Electrical Properties of Pd-Based Ohmic Contact to p-GaN with Au Diffusion Barrier
• Effect of Hydrogen Storage Materials on Ohmic Contact to p-GaN
• Electrical Properties and Reliabilities of Pt, PtAu, NiAu, and TaTi Ohmic Contact Materials for p-GaN
• Large Schottky Barriers and Memory Capability for Ni Contacts Formed on Low Mg-Doped p-GaN
• Low-resistance ohmic contacts to p-type GaN
• The effect of thermal annealing on the Ni/Au contact of p-type GaN
• Catalytic role of Au in Ni/Au contact on GaN(0001)
• Catalytic role of Au in Ni/Au contact on GaN(0001)

Search performed Thursday, February 14, 2002 11:08:31 AM.
© 1998 The Materials Research Society