References with buffer in the title or abstract

• High efficiency blue LED utilizing GaN film with AlN buffer layer grown by MOVPE
• Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga _1-xAl _xN (0 < x ≤ 0.4) films grown on sapphire substrates by MOVPE
• Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
• Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE using an AlN buffer layer
• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
• Effect of AlN buffer layer on AlGaN/α-Al₂O₃ heteroepitaxial growth by metalorganic vapor phase epitaxy
• Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
• Highly p-typed Mg-doped GaN films grown with GaN buffer layer
• Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition
• Structural and Electrical Properties of Reactively Sputtered Inn Thin Films on AlN-Buffered (00.1) Sapphire Substrates: Dependence on Buffer and Film Growth Temperatures and Thicknesses
• The Effect of GaN and AlN Buffer Layers on GaN Film Properties Grown on Both C Plane and A Plane Sapphire
• Single Phase Gallium Nitride on Sapphire with Buffering AlN Layer by Laser Induced CVD
• Properties of GaN Films Grown on A Plane (11(2)over Bar-0) and C Plane (0001) Sapphire
• Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates
• Optical gain of optically pumped Al_0.1Ga_0.9N/GaN double heterostructure at room temperature
• GaN grown on hydrogen plasma cleaned 6H-SiC substrates
• A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy
• Transmission Electron Microscopic Observation of AlN/Alpha Al2o3 Heteroepitaxial Interface with Initial Nitriding Ain Layer
• New Epitaxial Growth Method of Cubic GaN on (100)GaAs Using (ch3)(3)ga, HCl and Nh3
• Thermal stress in GaN epitaxial layers grown on sapphire substrates
• GaN Film Growth Using Single Source Precursors
• Microstructural characterization of alpha -GaN films grown on sapphire by organometallic vapor phase epitaxy
• Analysis of two-step-growth conditions for GaN on an AlN buffer layer
• Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy
• Microstructure and photoluminescence of GaN grown on Si(111) by plasma-assisted molecular beam epitaxy
• In Situ Monitoring of Reflection High Energy Electron Diffraction Oscillation During the Growth of Gallium Nitride Films by Gas Source Molecular Beam Epitaxy
• Conductivity Control of GaN and Fabrication of UV/Blue GaN Light Emitting Devices
• Characterization of Group III-nitride semiconductors by high-resolution electron microscopy
• Growth of AlN by metalorganic molecular beam epitaxy
• Nitridation process of sapphire substrate surface and its effect on the growth of GaN
• Electron-spin-resonance studies of donors in wurtzite GaN
• Microstructure of GaN epitaxy on SiC using AlN buffer layers
• High-quality GaN grown directly on SiC by halide vapour phase epitaxy.
• In situ monitoring and Hall measurements of GaN grown with GaN buffer layers
• Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers
• Growth defects in GaN films on sapphire: The probable origin of threading dislocations
• Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma-enhanced molecular beam epitaxy
• New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream Epitaxy
• The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
• Low-temperature epitaxial growth and photoluminescence characterization of GaN
• GaN thin films deposited via organometallic vapor phase epitaxy on alpha (6H)-SiC(0001) using high-temperature monocrystalline AlN buffer layers
• Undoped and doped GaN thin films deposited on high-tepmerature monocrystalline AlN buffer layers on vicinal and on-axis alpha-6H-SiC substrates via organometallic vapor phase epitaxy on alpha-6H-SiC(0001) via organometallic vapor phase epitaxy
• Si- and Ge doped GaN films grown with GaN buffers layers
• Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
• Molecular beam epitaxy growth and properties of GaN, Al_xGa_1-xN, and AlN on GaN/SiC substrates MBE growth and properties of GaN, Al_xGa_1-xN, and AlN
• Molecular beam epitaxy growth and characterization of GaN and Al_xGa_1-xN on 6H-SiC MBE growth and characterization
• X-ray crystallographic study of GaN epitaxial films on Al₂O₃(0001) substrates with GaN buffer layers
• Undoped and doped GaN thin films deposited on high- temperature monocrystalline AlN buffer layers on vicinal and on-axis alpha(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy
• Optically pumped GaN/Al_0.1Ga_0.9N double- heterostructure ultraviolet laser
• Surface-mode stimulated emission from optically pumped GaInN at room temperature
• Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition Effect of substrate pretreatment on growth of GaN
• Growth and characterization of GaN on sapphire (0001) using plasma-assisted ionized source beam epitaxy Growth and characterization of GaN on sapphire (0001)
• Approach to obtain high quality GaN on Si and SiC-on- silicon-on-insulator compliant substrate by molecular-beam epitaxy Approach to obtain high quality GaN
• Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers
• Growth of group III nitrides on Si(111) by plasma- assisted molecular beam epitaxy Growth of group III nitrides on Si(111)
• Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy
• Deposition and surface characterization of high quality single crystal GaN layers
• Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon
• Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
• PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
• GaN Growth Using GaN Buffer Layer
• Growth kinetics and structural quality in GaN epitaxy by low pressure MOVPE
• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
• New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream Epitaxy
• Luminescence studies of GaN grown on GaN and GaN/AIN buffer layers by metalorganic chemical vapor deposition
• MBE Growth and Properties of GaN and Al_xGa_1-xN on GaN/SiC Substrates
• A new buffer layer for MOCVD growth of GaN on sapphire
• Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC
• MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer
• High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III-V nitrides
• The selective growth in hydride vapor phase epitaxy of GaN
• Effect of Structural Defects and Chemical Impurities on Hall Mobilities in Low Pressure MOCVD Grown GaN
• Growth of Zinc-Blende GaN on GaAs (100) Substrates at High Temperature Using Low-Pressure MOVPE with a Low V/III Molar Ratio
• The Role of the Low Temperature Buffer Layer and Layer Thickness in the Optimization of OMVPE Growth of GaN on Sapphire
• Cubic Dominant GaN Growth on (001) GaAs Substrates by Hydride Vapor Phase
• Growth of Thick GaN Films on RF Sputtered AlN Buffer Layer by Hydride Vapor Phase Epitaxy
• MOVPE growth of high quality AlGaN/GaInN heterostructures for short wavelength light emitter
• Comparison of Luminescence and Physical Morphologies of GaN Epilayers
• MOVPE Growth and Structural Characterization of Al_xGa_1-xN
• Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
• Nucleation and Growth Behavior for GaN Grown on (0001) Sapphire via Multistep Growth Approach
• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
• Growth of GaN on GaAs(111)B by Metalorganic Hydrogen Chloride VPE Using Double Buffer Layer
• Effects of buffer layer on formation of domain boundaries in epilayer during film growth of GaN by low-pressure metal-organic vapor phase
• Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor- Phase Epitaxy
• Growth of GaN Thin Films on Sapphire Substrate by Low- Pressure MOCVD
• MBE Growth of Strain Engineered GaN Thin Films Utilizing a Surfactant
• Dependence of the Residual Strain in GaN on the AlN Buffer Layer Annealing Parameters
• Initial Stages of MOCVD Growth of Gallium Nitride Using a Multistep Growth Approach
• Raman Scattering and Photoluminescence of Mg-Doped GaN Films Grown by Molecular-Beam Epitaxy
• A Chemical and Structural Study of the AlN-Si Interface
• TEM/HREM Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire
• Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
• Optically Pumped InGaN/GaN Double Heterostructure Lasers with Cleaved Facets
• Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO
• Growth of GaN on Indium Tin Oxide/Glass Substrates by RF Plasma-Enhanced Chemical Vapor Deposition Method
• Evolution of Surface Morphology and Strain in Low-Temperature AlN Grown by Plasma-Assisted Molecular Beam Epitaxy
• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
• Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
• GaN layer growth in relation to buffer deposition temperature
• Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers
• Growth mechanism of GaN grown on sapphire with AlN buffer layer by MOVPE
• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
• Heterostructure for UV LEDs Based on Thick AlGaN Layers
• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
• Time-resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si
• GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy
• Extended defect reduction in GaN laterally overgrown on Si(111)
• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
• Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
• Cubic InGaN Grown by MOCVD
• Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
• Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
• Effects of Susceptor Geometry on GaN Growth on Si(111) with a New MOCVD Reactor
• Gallium Nitride Growth Using Diethylgallium Chloride As An Alternative Gallium Source
• Microstructure of GaN Grown on (111) Si by MOCVD
• Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
• Relaxation Phenomena in GaN/ AlN / 6H-SiC Heterostructures
• Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire
• Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
• The growth of thick GaN film on sapphire substrate by using ZnO buffer layer.
• New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type A^IIIB^V on sapphire substrates
• Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
• Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers
• Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
• Integration of PLZT and BST Family Oxides with GaN
• HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire Substrates
• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
• The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaN
• Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition
• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
• Formation and Stability of the Prismatic Stacking Fault in Wurtzite (Al,Ga,In) Nitrides
• Fabrication and Characterization of GaN Junction Field Effect Transistors
• The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
• Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
• High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer
• Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers
• Solar-Blind AlGaN Heterostructure Photodiodes
• Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
• Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
• Influence of buffer layers on the In-content of GaInN layers
• New Technique for Sublimation Growth of AlN Single Crystals
• HVPE/MOMBE Hybrid Growth of High Quality Hexagonal GaN on SiO2 Substrates with an AlN Buffer Layer
• Effect of High Temperature GaN Buffer Layer on the Growth of Thick GaN by Hydride Vapor Phase Epitaxy
• The Influence of the Low-Temperature Buffer-Layer on Substrate-Induced Biaxial Stress in a GaN Film on a Sapphire Substrate
• InGaN Film Growth on Polarity Controlled GaN Buffer Layer by Ammonia-MBE
• Pulsed MOCVD Technique for Lateral Overgrowth of GaN on SiC with Conducting Buffer Layers
• Observation of the Early Stages and 3D-2D Transition of MOCVD Grown GaN with LT-GaN Buffer Layer
• Heteroepitaxial Growth of GaN on Si Substrate Coated with a Thin Flat SiC Buffer layer
• Influence of the Thick GaN Buffer Growth Conditions on the Electroluminescence Properties of GaN/InGaN Multilayer Heterostructures

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© 1998 The Materials Research Society