Data for reference jones-pspie-3621-52

Optical properties of InGaAsN: a new 1 eV bandgap material system

E. D. Jones, N. A. Modine, A. A. Allerman, I. J. Fritz, S. R. Kurtz, A. F. Wright, S. T. Torez, X. Wei

Proc. Soc. Photo-Opt. Instrum. Eng. 3621, 52 (1999).

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This item is cited by the following items in the database:

  1. Electronic Properties of Ga(In)NAs Alloys

Contributed by A submitted manuscript, on Thursday, November 9, 2000 11:58:27 AM

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