Data for reference perkins-prl-82-3312

Nitrogen-activated transitions, level repulsion, and band gap reduction in GaAs1-xNx with x<0. 03

J. D. Perkins, A. Mascarenhas, Y. Zhang, J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz

Physical Review Letters 82, 3312 (1999).

This item is cited by the following items in the database:

  1. Electronic Properties of Ga(In)NAs Alloys

Contributed by A submitted manuscript, on Thursday, November 9, 2000 11:57:01 AM

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