Data for reference o'donnell-prl-82-237

Origin of Luminescence from InGaN Diodes

K. P. O'Donnell, R. W. Martin, P. G. Middleton

Physical Review Letters 82(1), 237 (1999).

This item is cited by the following items in the database:

  1. The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells
  2. Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells

Contributed by A submitted manuscript, on Friday, January 21, 2000 11:32:52 PM

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