stumm-prl-79-677

Data for reference stumm-prl-79-677

Can Amorphous GaN Serve as a Useful Electronic Material?

P Stumm, DA Drabold

Physical Review Letters 79(4), 677 (1997).

In this paper, we propose two structural models of amorphous GaN at different densities, obtained from approximate ab initio molecular dynamics. The network models we obtain are highly disordered but exhibit a large state-free optical gap, and have no homopolar bonds (or odd-membered rings). The radial distribution function, local bonding, and electronic density of states are described. We find that a model with many threefold atoms has weakly localized band tails, especially at the valence edge. This leads us to believe that amorphous GaN may have independent promise as a novel electronic material.

This item is cited by the following items in the database:

Visible Luminescent Activation of Amorphous AlN:Eu Thin-Film Phosphors with Oxygen

Contributed by Hugh H Richardson from 132.235.22.37 on Friday, June 15, 2001 3:49:48 PM

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