Data for reference smith-prl-79-3934

Reconstructions of the GaN(0001(bar)) Surface

A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, J. E. Northrup

Physical Review Letters 79, 3934 (1997).

This item is cited by the following items in the database:

  1. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  2. The Polarity of GaN: a Critical Review
  3. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  4. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  5. Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
  6. Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
  7. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
  8. Review of polarity determination and control of GaN

Contributed by R. Held from pc22.ece.umn.edu. on February 24, 1998 9:12:41 PM

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