Data for reference lilientalweber-prl-79-2835

Formation Mechanism of Nanotubes in GaN

Z Liliental-Weber, Y Chen, S Ruvimov, J Washburn

Physical Review Letters 79(15), 2835 (1997).

A formation mechanism for so-called nanotube defects in GaN is proposed. It is shown that two related types of defects are formed: nanotubes and pinholes. Both start with V shaped facets on {10-11} polar planes. Slow growth rate on these polar planes and impurity poisoning of growth steps are suggested as being responsible for initiation of these defects.

This item is cited by the following items in the database:

  1. Pinholes, Dislocations and Strain Relaxation in InGaN

Contributed by B. Jahnen from hugo.fen.baynet.de. on Sunday, July 12, 1998 7:46:44 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Friday, April 29, 2005 3:27:47 PM.
© 1998 The Materials Research Society