wetzel-prl-78-3923

Data for reference wetzel-prl-78-3923

Pressure Induced Deep Gap State of Oxygen in GaN

C Wetzel, T Suski, JW Ager, ER Weber, EE Haller, S Fischer, BK Meyer, RJ Molnar, P Perlin

Physical Review Letters 78(20), 3923 (1997).

O and Si donors in GaN are studied by Raman spectroscopy under hydrostatic pressure p. The ground state of O is found to transfer from a shallow level to a deep gap state at p approx 20 GPa reminiscent of DX centers in GaAs. Transferred to AlGaN we predict that O induces a deep gap state for x greater then 0.40. In GaN:Si no such state is induced up to the highest pressure obtained p = 25 GPa equivalent to x = 0.56 in Alx Ga1-xN and possibly higher. We attribute this distinction to the lattice sites of the dopants. O substituting for N is found to be the origin of high free electron concentration in bulk GaN crystals.

This item is cited by the following items in the database:

Optical properties of electron-irradiated GaN

Contributed by Christian Wetzel from 202.11.1.6 on Wednesday, May 21, 1997 1:59:14 AM

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