Data for reference wei-prl-76-664

Giant and composition-dependent optical bowing coefficient in GaAsN alloys

Su-Huai Wei, Alex Zunger

Physical Review Letters 76(4), 664 (1996).

Using first-principles supercell calculations we find a giant (7-16 eV) and composition-dependent optical bowing coefficient in GaAs1-xNx alloys. We show that both effects are due to the formation in the alloy of spatially separated and sharply localized band edge states. Our analysis suggests that in semiconductor alloys band gap variation as a function of x can be divided into two regions: (i) a bandlike region where the bowing coefficient is relatively small and nearly constant, and (ii) an impuritylike region where the bowing coefficient is relatively larger and composition dependent. For GaAs1-xN[sub x] the impuritylike behavior persists even for concentrated alloys. © 1996 The American Physical Society.

This item is cited by the following items in the database:

  1. Growth of single phase GaAs1-xNx with high nitrogen concentration by MOMBE
  2. Plasma-excited OMVPE of GaN on (0001) sapphire
  3. Surface Morphology and Structure of GaNxAs1-x
  4. Band gaps of GaPN and GaAsN alloys
  5. Optical Properties of GaNAs Grown by MBE
  6. Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
  7. Electronic Properties of Ga(In)NAs Alloys

Contributed by Yong-Hang Zhang from ises04.es.hac.com. on Thursday, February 1, 1996 9:45:10 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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