Data for reference perlin-prl-75-296

Towards the identification of the dominant donor in GaN

P. Perlin, T. Suski, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, S. Porowski, P.Boguslawski, J. Bernholc, J. C. Chervin, A. Polian, T. D. Moustakas

Physical Review Letters 75(2), 296 (1995).

We analyze optical absorption, transmission, luminescence, and Raman scattering in n-type GaN at hydrostatic pressures up to 30 GPa. The results show freeze-out of free electrons above ~= (approximately-equal-to) 20GPa due to trapping at levels that are resonant at ambient pressure but become gap states at high pressures. Ab initio calculations show that both the N vacancy and the Ga interstitial undergo this transition at ~= (approximately-equal-to) 20 GPa, but the vacancy should be more abundant. The pressure dependence of the yellow luminescence indicates that a transition between a shallow donor and a deep acceptor is involved.

This item is cited by the following items in the database:

  1. Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  2. Recent Results in the Crystal Growth of GaN at High N2 Pressure
  3. High Resistivity AlxGa1-xN Layers Grown by MOCVD
  4. Optical properties of electron-irradiated GaN

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