tersoff-prl-72-3570

Data for reference tersoff-prl-72-3570

Competing Relaxation Mechanisms in Strained Layers

J Tersoff, FK LeGoues

Physical Review Letters 72(22), 3570 (1994).

We show that strained epitaxial layers can relax by two competing mechanisms. At large misfit, the surface becomes rough, allowing easy nucleation of dislocations. However, strain-induced surface roughening is thermally activated, and the energy barrier increases very rapidly with decreasing misfit epsilon. Thus below some misfit epsilon_critical, the strain relaxes by nucleation of dislocations at existing sources before the surface has time to roughen. Relaxation via surface roughening is techologically undesirable; we discuss how temperature, surfactants, or compositional grading change epsilon_critical and so control the mode of relaxation.

This item is cited by the following items in the database:

Pinholes, Dislocations and Strain Relaxation in InGaN

Contributed by B. Jahnen from cmp04ww7.ww.uni-erlangen.de. on Thursday, July 16, 1998 5:19:54 AM

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