Data for reference cheong-prb-61-13687

Nitrogen-induced levels in GaNxAs1-x studied with resonant Raman scattering

H. M. Cheong, Y. Zhang, A. Mascarenhas, J. F. Geisz

Physical Review B 61, 13687 (2000).

This item is cited by the following items in the database:

  1. Electronic Properties of Ga(In)NAs Alloys

Contributed by A submitted manuscript, on Thursday, November 9, 2000 12:00:56 PM

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