Data for reference northrup-prb-60-8473

Indium-induced changes in GaN(0001) surface morphology

JE Northrup, J Neugebauer

Physical Review B 60(12), 8473 (1999).

This item cites the following items in the database:

  1. Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

This item is cited by the following items in the database:

  1. Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
  2. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

Contributed by R. M. Feenstra from 128.2.24.220 on Friday, June 1, 2001 4:20:26 PM

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