Data for reference saito-prb-60-1701

Atomic structure and phase stability of InxGa1-xN random alloys calculated using a valence-force-field method

T. Saito, Y. Arakawa

Physical Review B 60, 1701 (1999).

This item is cited by the following items in the database:

  1. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures

Contributed by A submitted manuscript, on Monday, November 8, 1999 10:51:57 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Tuesday, May 3, 2005 5:13:13 PM.
© 1998 The Materials Research Society