Data for reference calleja-prb-58-1550

Effect of Ga/Si Interdiffusion on Optical and Transport Properties of GaN Layers Grown on Si(111) by Molecular Beam Epitaxy

E. Calleja, M. A. Sánchez-García, D. Basak, F. J. Sánchez, F. Calle, P. Youinou, E. Muñoz, J. J. Serrano, J. M. Blanco, C. Villar, T. Laine, J. Oila, K. Saarinen, P. Hautojarvi, C. H. Molly, D. J. Somerford, I. Harrison

Physical Review B 58, 1550 (1998).

This item is cited by the following items in the database:

  1. Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

Contributed by A submitted manuscript, on Friday, October 9, 1998 10:53:52 AM

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