Data for reference buyanov-prb-58-1442

Influence of potential fluctuations on electrical transport and optical properties in modulation-doped GaN/Al0. 28Ga0. 72N heterostructures

A. V. Buyanov, J. P. Bergman, J. A. Sandberg, B. E. Sernelius, P. O. Holtz, B. Monemar, H. Amano, I. Akasaki

Physical Review B 58, 1442 (1998).

This item is cited by the following items in the database:

  1. Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
  2. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures

Contributed by A submitted manuscript, on Wednesday, July 28, 1999 11:30:33 AM

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