Data for reference im-prb-57-r9435

Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells

J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, A. Hangleiter

Physical Review B 57, R9435 (1998).

This item is cited by the following items in the database:

  1. The Polarity of GaN: a Critical Review
  2. The role of piezoelectric fields in GaN-based quantum wells
  3. X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.
  4. Optical phonons and free-carrier effects in MOVPE grown AlxGa1-xN measured by Infrared Ellipsometry

Contributed by A submitted manuscript, on Friday, July 10, 1998 11:12:32 PM

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