Data for reference narukawa-prb-55-1938r

Recombination dynamics of localized excitons in In0. 20Ga0. 80N-In0. 05Ga0. 95N multiple quantum wells,

Y. Narukawa, Y. Kawakami, Sz. Fujita, Sg. Fujita, S. Nakamura

Physical Review B 55, 1938R (1997).

This item is cited by the following items in the database:

  1. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  2. GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy

Contributed by A submitted manuscript, on Tuesday, March 11, 1997 2:57:39 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Tuesday, May 3, 2005 5:11:23 PM.
© 1998 The Materials Research Society