Data for reference park-prb-55-12995

Stability of deep donor and acceptor centers in GaN, AlN, and BN

CH Park, DJ Chadi

Physical Review B 55(19), 12995 (1997).

This item is cited by the following items in the database:

  1. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  2. Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 9:00:05 AM

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