Data for reference vogel-prb-55-12836

Structural and electronic properties of group-III nitrides

D. Vogel, P. Krüger, J. Pollmann

Physical Review B 55(19), 12836 (1996).

First principle calculations for wurtzite and zincblende GaN, InN, AlN and BN.

This item cites the following items in the database:

  1. Thin Films and Devices of Diamond, Silicon Carbide and Gallium Nitride
  2. Electronic and structural properties of GaN by the full- potential linear muffin-tin orbitals method: The role of the d electrons
  3. Optical and structural properties of III-V nitrides under pressure
  4. X-ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3d states in GaN
  5. Electronic, optical, and structural properties of some wurtzite crystals
  6. Explicit treatment of the gallium 3d electrons in GaN using the plane-wave pseudopotential method

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 9:02:39 AM
Modified by S. Strite from internet-gateway-x.zurich.ibm.com. on July 28, 1997 4:30:50 AM
Modified by S. Strite from internet-gateway-x.zurich.ibm.com. on July 28, 1997 4:30:50 AM

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