schikora-prb-54-8381

Data for reference schikora-prb-54-8381

Epitaxial growth and optical transitions of cubic GaN films

D Schikora, M Hankeln, DJ As, K Lischka , T Litz, A Waag , T Buhrow, F Henneberger

Physical Review B 54(12), 8381 (1996).

Single-phase cubic GaN layers are grown by plasma-assisted molecular-beam epitaxy. The temperature dependence of the surface reconstruction is elaborated. The structural stability of the cubic growth in dependence of the growth stoichiometry is studied by RHEED measurements and numerical simulations of the experimental RHEED patterns. Growth oscillations on cubic GaN are recorded at higher substrate temperatures and nearly stoichiometric adatom coverage. Photoluminescence reveals the dominant optical transitions of cubic GaN and, by applying an external magnetic field, their characteristic g factors are determined. Keywords: Number: 9. GALLIUM NITRIDES; CUBIC LATTICES; MOLECULAR BEAM EPITAXY; FILM GROWTH; STRUCTURAL STABILITY; SURFACE RECONSTRUCTION; RHEED; PHOTOLUMINESCENCE; NUMERICAL SOLUTION

This item is cited by the following items in the database:

Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, December 13, 1996 2:18:33 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.