gil-prb-54-7678

Data for reference gil-prb-54-7678

Oscillator strengths for optical band-to-band processes in GaN epilayers

B Gil , F Hamdani, H Morkoc

Physical Review B 54(11), 7678 (1996).

We investigated the evolution of the relative oscillator strengths of the A, B, and C excitons in alpha-GaN epilayers grown along the [0001] direction on sapphire, 6HSiC, and ZnO substrates by metalorganic vapor phase epitaxy and molecular-beam epitaxy. A universal model was found to account for the observed spectroscopic features regardless of the substrate employed. In addition, we found that, due to the small value of the spin-orbit interaction compared to the stress-induced modifications of the interlevel splitting, C and B lines may undergo a strain-induced exchange of their oscillator strengths when strain field in the epilayers varies from biaxial tension towards biaxial compression. Moreover, we can account for the strain-induced distribution of radiative recombination rates in high-quality GaN epilayers.

This item is cited by the following items in the database:

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, December 13, 1996 2:23:25 PM

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