Data for reference chuang-prb-54-2491

k.p method for strained wurtzite semiconductors

SL Chuang , CS Chang

Physical Review B 54(4), 2491 (1996).

The effective-mass Hamiltonian for wurtzite semiconductors. Analytical expressions for the valence-band dispersion, the effective masses, and the interband optical-transition momentum-matrix elements near the band edges, taking into account the strain effects.

This item is cited by the following items in the database:

  1. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
  2. Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-xN quantum-well lasers
  3. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
  4. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers
  5. Refractive index of InGaN/GaN quantum well
  6. Valence-band structure of wurtzite GaN including the spin-orbit interaction

Contributed by J. A. Majewski from pigpen.bl.physik.tu-muenchen.de. on Tuesday, October 15, 1996 9:58:14 AM

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