Data for reference shan-prb-54-13460

Strain effects on excitonic transitions in GaN: Deformation potentials

W Shan, RJ Hauenstein, AJ Fischer, JJ Song, WG Perry, MD Bremser, RF Davis, B Goldenberg

Physical Review B 54(19), 13460 (1996).

The authors report the strain effects on the excitonic transitions in GaN epitaxial layers on sapphire and SiC substrates with the emphasis on the determination of deformation potentials for wurtzite GaN.

This item cites the following items in the database:

  1. Strain effects on excitonic transitions in GaN: Deformation potentials

This item is cited by the following items in the database:

  1. Strain effects on excitonic transitions in GaN: Deformation potentials
  2. Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
  3. Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.

Contributed by W.K. Fong from 158.132.12.18 on Wednesday, October 11, 2000 10:20:18 PM

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