Data for reference menniger-prb-53-1881

Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence

J. Menniger, U. Jahn, O. Brandt, H. Yang, K. Ploog

Physical Review B 53(4), 1881 (1996).

The hexagonal and cubic phases of GaN are characterized by spatially resolved cathodoluminescence (CL) spectra from micrometer- size single crystals with either hexagonal or cubic habits grown by plasma-assisted molecular-beam epitaxy. At 5 K, distinct narrow excitonic lines are found at 3.472 and 3.272 eV for the hexagonal and cubic phase, yielding energy gaps of 3.500 and 3.300 eV, respectively. Detailed temperature- and intensity-dependent CL measurements on cubic GaN crystals enable us to clearly identify the exciton (free: 3.272 eV, bound: 3.263 eV) and the donor-acceptor pair (3.150 eV) transition. Moreover, we determine the donor-band and acceptor-band transition energy for this phase. In addition, phonon replicas of the exciton line and of the donor-acceptor pair transition are observed at 3.185 and 3.064 eV, respectively.

This item is cited by the following items in the database:

  1. Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  2. Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum-Well Structures
  3. Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru


If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.


MRS Internet Journal of Nitride Semiconductor Research

last updated Friday, April 29, 2005 6:16:03 PM.
© 1998 The Materials Research Society