Data for reference volm-prb-53-16543

Exciton fine structure in undoped GaN epitaxial films

D Volm, K Oettinger , T Streibl , D Kovalev , M Ben-Chorin, J Diener , BK Meyer , J Majewski, L Eckey , A Hoffman , H Amano , I Akasaki , K Hiramatsu , T Detchprohm

Physical Review B 53(24), 16543 (1996).

We report on photoluminescence experiments on hexagonal GaN epitaxial films grown by hydride and organometallic vapor phase epitaxy on sapphire and 6H-SiC. At lowtemperatures we observe free and bound exciton recombinations, which allow us to establish the free- exciton binding energy and the localization energies of the excitons bound to neutral donorsin undoped films. We demonstrate that the energetic positions of the excitonic recombination lines depend on the layer thickness and the substrate materials on which the layer was deposited. Theinfluence of strain on the valence-band splittings can be quantified when observing the free-exciton transitions onto the different valence bands. The experimental results are comparedto a theoretical calculation using a first-principle total-energy pseudopotential method within the local-density formalism. We present evidence for the existence of two shallowdonors in GaN. One of them most likely stems from an intrinsic defect. © 1996 The American Physical Society.[S0163-1829(96)05223-X]

This item is cited by the following items in the database:

  1. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
  2. Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
  3. Transient four wave mixing experiments on GaN
  4. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
  5. Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
  6. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures

Contributed by A submitted manuscript, on Wednesday, November 20, 1996 1:46:36 PM
Modified by A submitted manuscript, on Friday, September 20, 1996 12:07:51 PM
Modified by J. A. Majewski from pigpen.bl.physik.tu-muenchen.de. on Tuesday, October 15, 1996 9:49:57 AM

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