Data for reference manasreh-prb-53-16425

Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition

M. O. Manasreh

Physical Review B 53(24), 16425 (1996).

The optical absorption near the fundamental absorption edge in GaN thin films grown on sapphire substrates using the metalorganic chemical-vapor deposition technique is studied as a functionof temperature. The absorption spectrum shows a free-exciton peak at 353.55 nm and a shoulder at 354.67 nm, which is attributed to a bound exciton. The absorption band edge was determined fromthe energy position of the exciton line observed in the entire temperature range of 13- 300 K. The band-edge energies determined in this temperature range were fitted with the Varshniempirical relationship Eg(K)=E[sub g](0)-sigmaT2/(T+thetaD) and with the expression Eg(K)=Eg(0)-kappa/[exp(theta[sub E]/T)-1]. The results show that thetaD~= (approximately-equal-to) 737.9 K in agreement with thecalculated value. © 1996 The American Physical Society.[S0163-1829(96)03424-8]

This item is cited by the following items in the database:

  1. The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  2. Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  3. Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum-Well Structures

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