Data for reference brandt-prb-52-r2253

Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy

O. Brandt, H. Yang, B. Jenichen, Y. Suzuki, L. Daweritz, K. H. Ploog

Physical Review B 52(4), R2253 (1995).

We identify the growth conditions required for the synthesis of purely cubic GaN films on GaAs(001) by means of plasma- assisted molecular-beam epitaxy. It is shown that it is the surface stoichiometry which governs the phase composition and which thus has to be tightly controlled in order to avoid nucleation of hexagonal grains. Such control over the surface stoichiometry is achieved by investigating the surface reconstructions of zinc-blende GaN under both static and dynamic conditions by in situ reflection high-energy electron diffraction.

This item is cited by the following items in the database:

  1. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  2. Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
  3. Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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