Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry

Physical Review B 52(24), R17028 (1995).

We report on a quantitative analysis of the band gap of hexagonal GaN epilayers in terms of the joint contributions of the actual wurtzite symmetry on the one hand and of residual strain fields on the other hand. This investigation leads to revision of the previous modelings based on quasicubic descriptions of the valence-band physics and gives Delta ₁=10+- (plus-minus) 0.1 meV, Delta ₂=6.2+- (plus-minus) 0.1 meV, and Delta ₃=5.5+- (plus-minus) 0.1 meV. Last we propose a set of deformation potentials for the hexagonal GaN semiconductor.

This item is cited by the following items in the database:

1. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
2. Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
3. Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE.
4. Raman Determination of the Phonon Deformation Potentials in α-GaN
5. Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
6. Optical nonlinearities of Gallium Nitride
7. Optical properties of electron-irradiated GaN
8. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers
9. Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers

Contributed by Bo A I Monemar from mac101.ifm.liu.se. on Thursday, May 30, 1996 5:32:18 AM

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