Data for reference klann-prb-52-11615

Picosecond dynamics of excitons in cubic GaN

R. Klann, O. Brandt, H. Yang, H. T. Grahn, K. Ploog , A. Trampert

Physical Review B 52(16), 11615 (1995).

Using time-resolved photoluminescence, we investigate the spectral and temporal behavior of the near-band-edge emission located at 3.255-3.27 eV of cubic GaN/GaAs(001) grown by plasma- assisted molecular-beam epitaxy. In contrast to transitions at lower energies, this narrow high-energy emission band exhibits an ultrafast dynamics on a picosecond time scale. The decay is characterized by a biexponential behavior composed of a fast initial component (15-40 ps) followed by a second, slower component (100-400 ps). We attribute the initial decay to radiative decay of free excitons and the relaxation towards bound states. The second slower component is assigned to the radiative recombination of these bound excitons. This interpretation is supported by intensity-dependent measurements.

This item is cited by the following items in the database:

  1. Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru


If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.


MRS Internet Journal of Nitride Semiconductor Research

last updated Friday, April 29, 2005 11:24:46 AM.
© 1998 The Materials Research Society