Data for reference boguslawski-prb-51-17255

Native defects in gallium nitride

P. Boguslawski , E. L. Briggs, J. Bernholc

Physical Review B 51(23), 17255 (1995).

The results of an extensive theoretical study of native defects in hexagonal GaN are presented. We have considered cation and anion vacancies, antisites, and interstitials. The computations were carried out using ab initio molecular dynamics in supercells containing 72 atoms. N vacancy introduces a shallow donor level, and may be responsible for the n-type character of as-grown GaN. Due to the wide gap of nitrides, self-compensation effects strongly reduce both n-type and p-type doping efficiencies due to the formation of gallium vacancy and interstitial Ga, respectively.

This item is cited by the following items in the database:

  1. Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
  2. Recent Results in the Crystal Growth of GaN at High N2 Pressure
  3. Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects
  4. Room Temperature Ohmic contact on n-type GaN using plasma treatment

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