Data for reference glaser-prb-51-13326

Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition

E. R. Glaser, T. A. Kennedy, K. Doverspike, L. B. Rowland, D. K. Gaskill , J. A. Freitas, Jr., M. Asif Khan, D. T. Olson, J. N. Kuznia , D. K. Wickenden

Physical Review B 51(19), 13326 (1995).

Photoluminescence (PL) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers grown by organometallic chemical-vapor deposition. Both undoped and Mg-doped GaN films were investigated. Samples were studied from three laboratories to obtain general trends and behavior. The ODMR experiments on the undoped films reveal resonances from both effective-mass and deep-donor states. These two features appear in all of the undoped GaN films and are most likely associated with an intrinsic point defect or defects. The same two donor resonances and a Mg-related quasideep acceptor resonance are found from the ODMR experiments on the Mg-doped samples. The energy level of the deep-donor state is found from ODMR spectral studies to be ~= (approximately-equal- to) 1 eV below the conduction-band minimum. The PL experiments provide evidence for shallow acceptors in the undoped films and in a GaN sample lightly doped by residual Mg in the growth reactor. Models are proposed that describe the capture and recombination among these shallow- and deep-donor and acceptor states. The assignments of the magnetic resonance features are compared with the latest theoretical calculations of defect states in GaN.

This item is cited by the following items in the database:

  1. Yellow Band and Deep levels in Undoped MOVPE GaN.
  2. Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
  3. Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  4. Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
  5. Crystalline Structure changes in GaN Films Grown at Different Temperatures
  6. Temperature behaviour of the yellow emission in GaN
  7. New Precursor Routes to Nanocrystalline Cubic/Hexagonal Gallium Nitride, GaN
  8. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  9. Paramagnetic defects in GaN
  10. Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN

Contributed by F. K. Koschnick from cip5.uni-paderborn.de. on Thursday, May 30, 1996 5:42:22 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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