Data for reference ramirezflores-prb-50-8433

Temperature-dependent optical band gap of the metastable zinc-blende structure beta -GaN

G. Ramirez-Flores, H. Navarro-Contreras, A. Lastras-Martinez , R. C. Powell, J. E. Greene

Physical Review B 50(12), 8433 (1994).

The temperature-dependent (10-300 K) optical band gap E0(T) of the epitaxial metastable zinc-blende-structure beta - GaN(001)4 (times) 1 has been determined by modulated photoreflectance and used to interpret low-temperature photoluminescence spectra. E0 in beta -GaN was found to vary from 3.302+- (plus-minus) 0.004 eV at 10 K to 3.231+- (plus-minus) 0.008 eV at 300 K with a temperature dependence given by E0(T) =3.302-6.697 (times) 10-4T2/(T+600) eV. The spin-orbit splitting Delta 0 in the valence band was determined to be 17+- (plus-minus) 1 meV. The oscillations in the photoreflectance spectra were very sharp with a broadening parameter Gamma of only 10 meV at 10 K. The dominant transition observed in temperature-dependent photoluminescence was attributed to radiative recombination between a shallow donor, at ~= (congruent) 11 meV below the conduction-band edge and the valence band.

This item is cited by the following items in the database:

  1. Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  2. Optical Properties of GaNAs Grown by MBE
  3. Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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