kim-prb-50-1502

Data for reference kim-prb-50-1502

Electronic structure of GaN with strain and phonon distortions

Kwiseon Kim, Walter R. L. Lambrecht, Benjamin Segall

Physical Review B 50(3), 1502 (1994).

The full-potential linear muffin-tin orbital method is used to study the electronic and structural properties of zinc-blende GaN. The total energy and electronic band structures under uniaxial strain and zone-center TO phonon distortions were calculated. This yields the cubic elastic constants, the zone-center TO phonon frequency, and the internal-strain parameter zeta . The elastic constants of hexagonal GaN are obtained using the transformation method of Martin [Phys. Rev. B 6, 4546 (1972)]. The corresponding deformation potentials are calculated for some of the important eigenvalues.

This item is cited by the following items in the database:

Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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