Data for reference zhao-prb-48-11890

Electron and hole effective masses from magnetoluminescence studies of modulation-doped InP/In0. 53Ga0. 47As heterostructures

Q. X. Zhao, P. O. Holtz, B. Monemar, T. Lundström, J. Wallin, G. Landgren

Physical Review B 48, 11890 (1993).

This item is cited by the following items in the database:

  1. Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells

Contributed by A submitted manuscript, on Wednesday, July 28, 1999 11:27:15 AM


If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.


MRS Internet Journal of Nitride Semiconductor Research

last updated Tuesday, May 3, 2005 5:10:11 PM.
© 1998 The Materials Research Society