Data for reference perlin-prb-45-83

Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure

Piotr Perlin , Claude Jauberthie-Carillon, Jean Paul Itie, Alfonso San Miguel , Izabella Grzegory , Alain Polian

Physical Review B 45(1), 83 (1992).

Gallium nitride was studied by Raman scattering and x- ray-absorption spectroscopy up to 60 GPa. A high-pressure structural phase transition was observed in gallium nitride at 47 GPa by means of Raman scattering and x-ray-absorption spectroscopy. We also report the direct determination of the bulk modulus B0 of this compound (245 GPa). Gruneisen parameters of the four observed phonon modes were established. The transition pressure is compared with existing calculations.

This item is cited by the following items in the database:

  1. Raman Determination of the Phonon Deformation Potentials in α-GaN
  2. Prospects for high-pressure crystal growth of III-V nitrides
  3. Physical Properties of Bulk GaN Crystals Grown by HVPE

Contributed by Piotr Perlin from omc.eece.unm.edu. on Wednesday, March 13, 1996 4:23:01 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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