perlin-prb-45-13307

Data for reference perlin-prb-45-13307

Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties

P. Perlin, I. Gorczyca , N. E. Christensen , I. Grzegory, H. Teisseyre, T. Suski

Physical Review B 45(23), 13307 (1992).

Results of experimental and theoretical studies of the fundamental electronic properties of GaN are presented. Single crystals of GaN grown by means of an equilibrium high-pressure technique have been used for the determination of the energy gap E_g, refractive index n, and their pressure dependences. The electronic band structure of GaN has been calculated by means of the self-consistent linear- muffin-tin-orbital method. It has allowed us to determine the pressure variation of the measured electronic properties of GaN and to reexamine the character of E_g (direct or indirect). A satisfactory agreement between the experimental and theoretical results has been obtained, and it is found that GaN is a direct-band-gap semiconductor. The pressure dependences of E_g and n have been used also for comparison of GaN with other semiconductors and to examine the validity of some semiempirical schemes used for the classification of semiconductor compounds.

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Contributed by Piotr Perlin from omc.eece.unm.edu. on Wednesday, March 13, 1996 4:44:31 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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