Data for reference foley-prb-33-1430

Pseudopotential band structure of indium nitride

C. P. Foley, T. L. Tansley

Physical Review B 33, 1430 (1986).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  3. Electronic band structures and effective-mass parameters of wurtzite GaN and InN

Contributed by S. Strite

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