monemar-prb-10-676

Data for reference monemar-prb-10-676

Fundamental energy gap of GaN from photoluminescence excitation spectra

B. Monemar

Physical Review B 10, 676 (1974).

This item is cited by the following items in the database:

GaN, AlN, and InN: A review
Free Excitons in GaN
Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE.
Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
Electronic band structures and effective-mass parameters of wurtzite GaN and InN
Growth and Device Performance of GaN Schottky Rectifiers
Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
Preparation of stoichiometric GaN(0001)-1×1: an XPS study
Core-Level Photoemission From Stoichiometric GaN(0001)-1×1

Contributed by S. Strite

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.