Absorption, reflectance, and luminescence of GaN epitaxial layers

Physical Review B 4, 1211 (1971).

This item is cited by the following items in the database:

1. GaN, AlN, and InN: A review
2. ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
   
3. Tunable Second-Harmonic Studies of GaN Films Near the Fundamental Band Edge
4. Free Excitons in GaN
5. Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
6. Evidence for Shallow Acceptor Levels in MBE Grown GaN
7. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
8. Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE.
9. Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
10. The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
11. Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
12. Optical nonlinearities of Gallium Nitride
13. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
14. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers
15. Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
16. Free excitons in strained MOCVD-grown GaN layers

Contributed by S. Strite

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