Data for reference fan-pr-82-900

Temperature dependence of the energy gap in semiconductors

H. Y. Fan

Physical Review 82, 900 (1951).

This item is cited by the following items in the database:

  1. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

Contributed by A submitted manuscript, on Monday, July 6, 1998 11:23:30 PM

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