Data for reference mishra-pieee-90-1022

AlGaN/GaN HEMTs—an overview of device operation and applications

U. K. Mishra, P. Parikh, Y. -F. Wu

Proceedings of the IEEE 90(6), 1022 (2002).

_Ref70840314

This item is cited by the following items in the database:

  1. The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors

Contributed by A submitted manuscript, on Friday, September 10, 2004 2:39:59 PM

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