Data for reference mohammad-pieee-83-1306

Emerging GaN Based Devices

S. N. Mohammad, A. A. Salvador, H. Morkoç

Proceedings of the IEEE 83(10), 1306 (1995).

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This item is cited by the following items in the database:

  1. Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
  2. Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  3. Degenerate Layer at GaN/sapphire interface: Influence on Hall-effect measurements
  4. Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  5. p-doping of GaN by MOVPE
  6. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  7. Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  8. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by Toby Strite from internet-gw.zurich.ibm.ch. on Saturday, January 27, 1996 8:03:03 AM

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