Data for reference davydov-physstatsolb-230-r4

Band gap of InN and In-rich InxGa1-xN alloys (0. 36<x<1)

V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, E. E. Haller

Physica Status Solidi B 230, R4 (2002).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells

Contributed by A submitted manuscript, on Tuesday, September 24, 2002 3:31:33 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, May 4, 2005 12:29:44 PM.
© 1998 The Materials Research Society