Data for reference beaumont-physstatsolb-227-1

Epitaxial Lateral Overgrowth of GaN

B. Beaumont, Ph. Vennéguès, P. Gibart

Physica Status Solidi B 227, 1 (2001).

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This item is cited by the following items in the database:

  1. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
  2. Electron Beam Bombardment Induced Decrease of Cathodoluminescence Intensity from GaN Not Caused by Absorption in Buildup of Carbon Contamination

Contributed by A submitted manuscript, on Tuesday, November 26, 2002 7:05:03 PM

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