Data for reference kornitzer-physstatsolb-216-5

High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers

K. Kornitzer, T. Ebner, M. Grehl, K. Thonke, R Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Leszczynski, I. Grzegory, S. Porowski

Physica Status Solidi B 216, 5 (1999).

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This item is cited by the following items in the database:

  1. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
  2. Free excitons in strained MOCVD-grown GaN layers

Contributed by A submitted manuscript, on Monday, December 9, 2002 10:12:51 PM

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