Data for reference bloom-physstatsolb-66-161

Band structure and reflectivity of GaN

S. Bloom, G. Harbeke, E. Meier, I. B. Ortenburger

Physica Status Solidi B 66, 161 (1974).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  3. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
  4. Free excitons in strained MOCVD-grown GaN layers

Contributed by S. Strite
Modified by Arles Victor Gil rebaza III from 200.106.124.80 on Tuesday, May 4, 2004 12:40:59 PM

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