Data for reference shi-physstatsola-188-757

Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate

Y. Shi, B. Liu, L. Liu, J. H. Edgar, H. M. Meyer III, E. D. Payzant, L. R. Walker, N. D. Evans, J. G. Swadener, J. Chaudhuri, Joy Chaudhuri

Physica Status Solidi A 188, 757 (2001).

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This item is cited by the following items in the database:

  1. Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
  2. The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation

Contributed by A submitted manuscript, on Monday, February 9, 2004 6:40:42 PM

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